PROJECTION ELECTRON LITHOGRAPHY USING APERTURE LENSES

被引：7

作者：

HEYNICK, LN ^{[1
]}

WESTERBERG, ER ^{[1
]}

HARTELIUS, CC ^{[1
]}

LEE, RE ^{[1
]}

机构：

[1] STANFORD RES INST,MENLO PK,CA 94025

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 07期

关键词：

D O I：

10.1109/T-ED.1975.18151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：399 / 409

页数：11

共 13 条

[1]

BERSIN RL, 1970, SOLID STATE TECHNOL, P39

[2]

CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521

[3]

Davisson C. J., 1931, PHYS REV, V38, P585

[4]

GANS R, 1937, Z TECH PHYS, V18, P41

[5] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

HALLER, I ;

HATZAKIS, M ;

SRINIVASAN, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) :251-+

[6] ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].

HATZAKIS, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :1033-&

[7]

Kelly J., 1974, 1974 International Electron Devices Meeting (IEDM), P592, DOI 10.1109/IEDM.1974.6219806

[8] ELECTRON FLYS EYE LENS ARTWORK CAMERA [J].

LEMMOND, CQ ;

BUSCHMAN.EC ;

KLOTZ, TH ;

WHITE, GM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :598-603

[9]

LIVESAY WR, 1974, 1974 IEEE INT EL DEV

[10]

NEWBERRY SP, 1966, FAL P JOINT COMP C A, V29, P717

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