GERMANIUM INSULATED-GATE FIELD-EFFECT TRANSISTOR (FET)

被引：11
作者：
CHANG, LL
YU, HN
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 03期
关键词：
D O I：
10.1109/PROC.1965.3715
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：316 / &
相关论文
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