MECHANISM FOR INITIAL-STAGE OF SELECTIVE TUNGSTEN GROWTH EMPLOYING A WF6 AND SIH4 MIXTURE

被引：15

作者：

ITOH, H ^{[1
]}

KAJI, N ^{[1
]}

WATANABE, T ^{[1
]}

OKANO, H ^{[1
]}

机构：

[1] TOSHIBA CO LTD,DEPT INTEGRATED CIRCUIT ADV PROC ENGN,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

TUNGSTEN; SELECTIVE GROWTH; INDUCTION TIME; ELECTRON TRANSFER; DISSOCIATIVE ADSORPTION; ELECTRONEGATIVITY; CHEMICAL-VAPOR-DEPOSITION;

D O I：

10.1143/JJAP.30.1525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Precise control of the interface reaction between adsorbates and the solid surface is now becoming a key issue for thin film growth technology. In this paper, the importance of electronic interaction in selective thin film growth has been demonstrated for the first time for the growth of tungsten films. It has been found that the dissociation of adsorbed molecules due to electron transfer from the substrate plays a crucial role in realizing the selectivity of tungsten growth.

引用

页码：1525 / 1529

页数：5

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