RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES

被引：41

作者：

BONNEFOI, AR ^{[1
]}

MCGILL, TC ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 12期

关键词：

D O I：

10.1109/EDL.1985.26258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：636 / 638

页数：3

共 18 条

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[7] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

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