ELECTRICAL-PROPERTIES AND STRUCTURES OF THE MOCVD-AIN/GAAS INTERFACE

被引：4

作者：

FUJIEDA, S ^{[1
]}

AKIMOTO, K ^{[1
]}

HIROSAWA, I ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

MIZUKI, J ^{[1
]}

MATSUMOTO, Y ^{[1
]}

MATSUI, J ^{[1
]}

机构：

[1] NEC CORP LTD,RES & DEV GRP,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90113-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The GaAs surface pretreatment conditions for MOCVD-AlN/GaAs MIS diodes are investigated. The electrical properties and their thermal stability were drastically improved by a pure H2 pretreatment and a PH3 pretreatment of the GaAs surface at 500°C prior to the AlN deposition. This fact suggests that excess As generates interface states, which can be decreased by a surface stoichiometry control to reduce the As concentration. Grazing incidence X-ray diffraction measurements revealed 1×4 and 1×6 superstructures at the interface between the H2-pretreated GaAs and the AlN film deposited at 220°C. © 1989.

引用

页码：516 / 521

页数：6

共 5 条

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MATSUMOTO, Y ;

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[2]

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[3] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF THE AIN GAAS MIS SYSTEM AND THEIR THERMAL-STABILITY BY GAAS SURFACE STOICHIOMETRY CONTROL [J].

FUJIEDA, S ;

MIZUTA, M ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03) :L296-L299

[4]

MIZUTA M, 1987, 19TH C SOL STAT DEV, P135

[5]

MIZUTA M, 1986, JPN J APPL PHYS, V25, P945

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