A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

被引:2
|
作者
Wang Honglai [1 ]
Zhang Xiaoxing [1 ]
Dai Yujie [1 ]
Lu Yingjie [1 ]
Matsuoka, Toshimasa [2 ]
Wang Jun [2 ]
Taniguchi, Kenji [2 ]
机构
[1] Nankai Univ, Inst Microelectron, Tianjin 300457, Peoples R China
[2] Osaka Univ, Dept Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan
关键词
bandgap reference; CMOS; subthreshold;
D O I
10.1088/1674-4926/32/8/085009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion, without the need for any bipolar transistors. The voltage reference is designed and fabricated by a 0.18 mu m CMOS process. The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/degrees C at a 0.8 V supply voltage over the temperature range of -35 to 85 degrees C and a 0.1% variation in supply voltage from 0.8 to 3 V. Furthermore, the supply current is only 1.5 mu A at 0.8 V supply voltage.
引用
收藏
页数:4
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