ABINITIO CALCULATIONS OF ELECTRONIC-STRUCTURE AND ELASTIC-CONSTANTS IN AIP

被引：33

作者：

RODRIGUEZHERNANDEZ, P

MUNOZ, A

机构：

[1] Dept. de Fisica Fundamental Y Exp., La Laguna Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 12期

关键词：

D O I：

10.1088/0268-1242/7/12/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an ab initio pseudopotential calculation within the local density approximation to determine the electronic structure and the full set of elastic constants of AIP, which have not yet been directly established experimentally. We find C-11 = 1.34, C-12 = 0.68 and C44 = 0.70 Mbar. We also present a study of the electronic band structure of AIP.

引用

页码：1437 / 1440

页数：4

共 25 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].