REDISTRIBUTION OF EPITAXIAL SI ON (001) GAAS DURING OVERGROWTH BY GAAS

被引：26

作者：

BRANDT, O ^{[1
]}

CROOK, GE ^{[1
]}

PLOOG, K ^{[1
]}

WAGNER, J ^{[1
]}

MAIER, M ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS, W-7800 FREIBURG, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 10(19) Si-atoms/cm3 in the first 40 nm of the GaAs cap layer. The systematic investigation of samples having different cap thickness by Hall effect measurements and local vibrational mode Raman spectroscopy allows us to identify the site distribution of Si atoms in the cap layer and yields insight into the migration mechanism.

引用

页码：2730 / 2732

页数：3

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