ANOMALOUS ELECTRON-SPIN RELAXATION IN AMORPHOUS-SILICON

被引：31
作者：
ASKEW, TR
STAPLETON, HJ
BROWER, KL
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.33.4455
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4455 / 4463
页数：9
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