PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：29
作者：
HOUDRE, R [1 ]
MORKOC, H [1 ]
机构：
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
来源：
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1990年 / 16卷 / 02期
关键词：
D O I：
10.1080/10408439008243746
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
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页码：91 / 114
页数：24
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