BULK AND SURFACE-DEFECTS IN IMPLANTED AND ANNEALED GAAS

被引：0

作者：

BELLON, P ^{[1
]}

CHEVALIER, JP ^{[1
]}

MARTIN, G ^{[1
]}

DECONINCK, P ^{[1
]}

MALUENDA, J ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL, F-94450 LIMEIL BREVANNES, FRANCE

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：309 / 314

页数：6

共 12 条

[1] FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

YEO, YK ;

RAI, AK ;

PARK, YS ;

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4821-4825

[2] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF SI IMPLANTED GAAS [J].

BUJATTI, M ;

CETRONIO, A ;

NIPOTI, R ;

OLZI, E .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :334-336

[3] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[4] DETECTION OF GA VACANCIES IN ELECTRON-IRRADIATED GAAS BY POSITRONS [J].

HAUTOJARVI, P ;

MOSER, P ;

STUCKY, M ;

CORBEL, C ;

PLAZAOLA, F .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :809-810

[5] THE STACKING-FAULT TETRAHEDRON [J].

KALONJI, G ;

CAHN, JW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (04) :521-529

[6] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :831-&

[7] TRANSMISSION ELECTRON-MICROSCOPIC OBSERVATION OF MICRODEFECTS IN ZN+-IMPLANTED GAAS [J].

MORITA, E ;

KASAHARA, J ;

KAWADO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10) :1274-1281

[8] CHARACTERISTICS OF ION-IMPLANTATION DAMAGE AND ANNEALING PHENOMENA IN SEMICONDUCTORS [J].

NARAYAN, J ;

HOLLAND, OW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2651-2662

[9]

Reynaud F., 1986, Radiation Effects, V88, P1, DOI 10.1080/00337578608207492

[10] CORRELATION BETWEEN STRUCTURAL AND ELECTRICAL PROFILES IN ION-IMPLANTED GAAS [J].

SADANA, DK ;

BOOKER, GR ;

SEALY, BJ ;

STEPHENS, KG ;

BADAWI, MH .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3) :183-186

← 1 2 →