A FULLY INTEGRATED LOW-NOISE HEMT CHARGE PREAMPLIFIER

被引：2

作者：

BERTUCCIO, G

DEGERONIMO, G

LONGONI, A

LAUXTERMANN, S

RUNGE, K

机构：

[1] POLITECN MILAN, DIPARTIMENTO ELETTRON & INFORMAT, I-20133 MILAN, ITALY

[2] FRAUNHOFER INST APPL SOLID STATE PHYS, D-79108 FREIBURG, GERMANY

[3] UNIV FREIBURG, FAK PHYS, D-79104 FREIBURG, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 365卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(95)00553-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The design criteria of the first fully integrated charge preamplifier completely based on HEMTs, together with few preliminary tests of the circuit, has been already presented by the authors [G. Bertuccio et al., Nucl. Instr. and Meth. A 338 (1994) 582]. In the previous work the circuit was tested directly on wafer using coplanar probes. In this Letter we present a more accurate characterisation of the amplifier, including its noise and linearity. The results here presented have been obtained with the amplifier diced and bonded in a suitable package for low noise applications.

引用

页码：592 / 595

页数：4

共 6 条

[1] A NOVEL CHARGE SENSITIVE PREAMPLIFIER WITHOUT THE FEEDBACK RESISTOR [J].