BAND-TO-BAND AUGER PROCESSES IN 1.3-MU-M INGAASP SEMICONDUCTOR-LASERS

[1] BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP [J]. ELECTRONICS LETTERS, 1985, 21 (02) : 58 - 59

[2] BARDYSZEWSKI W, UNPUB APPL PHYS LETT

[3] CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07): : L201 - L206

[4] OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02): : L47 - L52

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[6] INTERBAND AUGER RECOMBINATION IN INGAASP [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941

[7] CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6095 - 6100

[8] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92

[9] GARBUZOV DZ, 1982, SOV PHYS SEMICOND+, V16, P707

[10] GARBUZOV DZ, 1983, SOV PHYS SEMICOND+, V17, P992

[1] BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP [J]. ELECTRONICS LETTERS, 1985, 21 (02) : 58 - 59

[2] BARDYSZEWSKI W, UNPUB APPL PHYS LETT

[3] CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07): : L201 - L206

[4] OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02): : L47 - L52

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[6] INTERBAND AUGER RECOMBINATION IN INGAASP [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941

[7] CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6095 - 6100

[8] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92

[9] GARBUZOV DZ, 1982, SOV PHYS SEMICOND+, V16, P707

[10] GARBUZOV DZ, 1983, SOV PHYS SEMICOND+, V17, P992