BISTABLE CURRENT FLUCTUATIONS IN REVERSE-BIASED P-N JUNCTIONS OF GERMANIUM

被引：35

作者：

WOLF, D

HOLLER, E

机构：

来源：

关键词：

D O I：

10.1063/1.1708950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：189 / &

共 11 条

[1] BREHM H, 1964, Z ANGEW PHYSIK, V18, P184
[2] CHARACTERISTICS OF BURST NOISE
CARD, WH
CHAUDHARI, PK
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 652 - +
[3] GARRETT CGB, 1955, J APPL PHYS, V27, P299
[4] FLUCTUATION NOISE IN SEMICONDUCTOR SPACE-CHARGE REGIONS
GIACOLETTO, L
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (05): : 921 - &
[5] MICROPLASMA INTERACTION IN SILICON P-N JUNCTIONS
HAITZ, RH
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 439 - &
[6] MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA
HAITZ, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1370 - &
[7] THEORY OF MICROPLASMA INSTABILITY IN SILICON
MCINTYRE, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 983 - &
[8] MUTUAL INTERACTION BETWEEN MICROPLASMAS IN SILICON P-N JUNCTIONS
RUGE, I
KEIL, G
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3306 - &
[9] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON
SHOCKLEY, W
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +
[10] CURRENT PULSES DURING BREAKDOWN IN SILICON P-N JUNCTIONS
TAN, DS
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 210 - &