CHARACTERIZATION OF INTRINSIC STRESSES OF PECVD SILICON-NITRIDE FILMS DEPOSITED IN A HOT-WALL REACTOR

被引：1

作者：

AITE, K ^{[1
]}

KOEKOEK, R ^{[1
]}

HOLLEMAN, J ^{[1
]}

MIDDELHOEK, J ^{[1
]}

机构：

[1] TEMPRESS BV,7903 AG HOOGEVEEN,NETHERLANDS

来源：

JOURNAL DE PHYSIQUE | 1989年 / 50卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1989539

中图分类号：

学科分类号：

摘要：

引用

页码：323 / 331

页数：9

共 16 条

[1] AITE K, 1988, NOV P MRS FALL M BOS, V130
[2] BUDHANI RC, 1988, APPL PHYS LETT, V52
[3] THERMAL EXPANSION OF SPUTTERED SILICON NITRIDE FILMS
BURKHARDT, PJ
MARVEL, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 864 - +
[4] CHABAL YJ, 1985, 17TH P INT C PHYS SE, P909
[5] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS
CLAASSEN, WAP
VALKENBURG, WGJN
WILLEMSEN, MFC
VANDERWIJGERT, WM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) : 893 - 898
[6] COBURN JW, 1972, J APPL PHYS, V43, P4365
[7] ION ENERGIES AT CATHODE OF A GLOW DISCHARGE
DAVIS, WD
VANDERSLICE, TA
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 219 - &
[8] STRESS IN ION-IMPLANTED CVD SI3N4 FILMS
EERNISSE, EP
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3337 - 3341
[9] HAAS G, 1966, PHYS THIN FILMS, V2, P211
[10] HIROSE M, 1984, SEMICONDUCT SEMIMET, V21, P12