CHARACTERISTICS OF THE SYNTHESIS OF BETA-SIC BY THE IMPLANTATION OF CARBON-IONS INTO SILICON

被引:46
作者
KIMURA, T
KAGIYAMA, S
YUGO, S
机构
关键词
D O I
10.1016/0040-6090(82)90295-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:191 / 198
页数:8
相关论文
共 19 条
[1]   STRUCTURE AND OPTICAL-PROPERTIES OF SILICON IMPLANTED BY HIGH-DOSES OF 70 AND 310 KEV CARBON-IONS [J].
AKIMCHENKO, IP ;
KISSELEVA, KV ;
KRASNOPEVTSEV, VV ;
TOURYANSKI, AG ;
VAVILOV, VS .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :7-12
[2]  
AKIMCHENKO IP, 1979, SOV PHYS SEMICOND+, V13, P219
[3]   FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].
BORDERS, JA ;
PICRAUX, ST ;
BEEZHOLD, W .
APPLIED PHYSICS LETTERS, 1971, 18 (11) :509-&
[4]   EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS [J].
DEXTER, RJ ;
PICRAUX, ST ;
WATELSKI, SB .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :455-457
[5]   FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION [J].
EDELMAN, FL ;
KUZNETSOV, ON ;
LEZHEIKO, LV ;
LUBOPYTOVA, EV .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :13-15
[6]   THERMAL OXIDATION OF SILICON AFTER ION-IMPLANTATION [J].
FRITZSCH.CR ;
ROTHEMUN.W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1603-1605
[7]   OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS [J].
GARMIRE, E ;
STOLL, H ;
YARIV, A ;
HUNSPERGER, RG .
APPLIED PHYSICS LETTERS, 1972, 21 (03) :87-+
[8]   FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION [J].
HAYASHI, T ;
OKAMOTO, H ;
HOMMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :1005-1006
[9]  
HEIM G, 1975, APPL PHYS, V7, P231
[10]   STRUCTURE AND ANNEALING PROPERTIES OF SILICON-CARBIDE THIN-LAYERS FORMED BY IMPLANTATION OF CARBON-IONS IN SILICON [J].
KIMURA, T ;
KAGIYAMA, S ;
YUGO, S .
THIN SOLID FILMS, 1981, 81 (04) :319-327