TITANIUM CARBIDE THIN-FILMS OBTAINED BY REACTIVE MAGNETRON SPUTTERING

The deposition rate, composition and diffraction spectra of TiC thin films, obtained by magnetron sputtering in the CH//4-pressure range from 0. 5 multiplied by 10** minus **2 to 9 multiplied by 10** minus **2 Pa, have been measured. Deposition rate measurements show that at low pressures ( less than 1. 5 multiplied by 10** minus **2 Pa) the system operated under conditions such that pure Ti was sputtered. At pressures higher than 4 multiplied by 10** minus **2 Pa a TiC layer covered the target (reactive conditions). In the intermediate case the target surface consisted of Ti and TiC. Study of the composition, diffraction spectra and crystal lattice constants of the films showed that continuous conversion occurred from pure Ti films to stoichiometric TiC films when the CH// 4-pressure was raised from 1. 5 multiplied by 10** minus **2 to 4 multiplied by 10** minus **2 Pa.