PROFILING OF INHOMOGENEOUS CARRIER TRANSPORT-PROPERTIES WITH THE INFLUENCE OF TEMPERATURE IN SILICON-ON-INSULATOR FILMS FORMED BY OXYGEN IMPLANTATION

被引：18

作者：

CRISTOLOVEANU, S

LEE, JH

PUMFREY, J

DAVIS, JR

ARROWSMITH, RP

HEMMENT, PLF

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3199 / 3203

页数：5

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