PROFILING OF INHOMOGENEOUS CARRIER TRANSPORT-PROPERTIES WITH THE INFLUENCE OF TEMPERATURE IN SILICON-ON-INSULATOR FILMS FORMED BY OXYGEN IMPLANTATION

被引：18
|
作者：
CRISTOLOVEANU, S
LEE, JH
PUMFREY, J
DAVIS, JR
ARROWSMITH, RP
HEMMENT, PLF
机构：
[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期
关键词：
D O I：
10.1063/1.337737
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3199 / 3203
页数：5
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