PROFILING OF INHOMOGENEOUS CARRIER TRANSPORT-PROPERTIES WITH THE INFLUENCE OF TEMPERATURE IN SILICON-ON-INSULATOR FILMS FORMED BY OXYGEN IMPLANTATION

被引：18

作者：

CRISTOLOVEANU, S

LEE, JH

PUMFREY, J

DAVIS, JR

ARROWSMITH, RP

HEMMENT, PLF

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

[2] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3199 / 3203

页数：5

共 18 条

[1] THERMAL DONOR AND NEW DONOR GENERATION IN SOI MATERIAL FORMED BY OXYGEN IMPLANTATION
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HEMMENT, PLF
ARROWSMITH, RP
[J]. ELECTRONICS LETTERS, 1985, 21 (18) : 802 - 804
[2] GALVANOMAGNETIC EFFECTS IN INHOMOGENEOUS ANISOTROPIC SEMICONDUCTORS - APPLICATION TO CHARACTERIZATION OF SILICON FILMS ON SAPPHIRE
CRISTOLOVEANU, S
LEE, JH
CHOVET, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 725 - 732
[3] Cristoloveanu S., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P49
[4] SILICON ON SAPPHIRE IN FRANCE - A REVIEW OF THE PHYSICOCHEMICAL AND ELECTRICAL-PROPERTIES
CRISTOLOVEANU, S
GHIBAUDO, G
KAMARINOS, G
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (02): : 161 - 185
[5] TEMPERATURE-DEPENDENCE AND NON-UNIFORMITY OF ELECTRICAL-PROPERTIES OF SOI FILMS OBTAINED BY OXYGEN IMPLANTATION
CRISTOLOVEANU, S
WYNCOLL, J
SPINELLI, P
HEMMENT, PLF
ARROWSMITH, RP
[J]. PHYSICA B & C, 1985, 129 (1-3): : 249 - 254
[6] INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES
ELLIOT, ABM
ANDERSON, JC
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (05) : 531 - +
[7] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON
HEMMENT, PLF
MAYDELLONDRUSZ, E
STEVENS, KG
KILNER, JA
BUTCHER, J
[J]. VACUUM, 1984, 34 (1-2) : 203 - 208
[8] HSU ST, 1975, RCA REV, V36, P240
[9] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE
IPRI, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2770 - +
[10] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS
JAUSSAUD, C
STOEMENOS, J
MARGAIL, J
DUPUY, M
BLANCHARD, B
BRUEL, M
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1064 - 1066

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