EXPERIMENTAL-STUDY OF THE FREQUENCY LIMITS OF A RESONANT TUNNELING OSCILLATOR

被引:18
作者
COLEMAN, PD
GOEDEKE, S
SHEWCHUK, TJ
CHAPIN, PC
GERING, JM
MORKOC, H
机构
[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA
关键词
ELECTRIC NETWORKS - Equivalent Circuits - SEMICONDUCTOR DIODES; TUNNEL; -; Heterojunctions;
D O I
10.1063/1.96518
中图分类号
O59 [应用物理学];
学科分类号
摘要
An equivalent circuit obtained from microwave impedance and power data is proposed for a resonant tunneling diode. The four-element circuit consists of a series R and C in parallel with a nonlinear negative differential conductance -G, the combination in turn in series with a resistor r. The resistive cut-off frequency predicted by this model depends on both the RC and RG products. Detection at THz frequencies is also explained by the model.
引用
收藏
页码:422 / 424
页数:3
相关论文
共 8 条
[1]  
GEODEKE SD, 1985, THESIS U ILLINOIS UR
[2]   FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].
LURYI, S .
APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492
[3]   MICROWAVE EQUIVALENT-CIRCUIT PARAMETERS OF GUNN-EFFECT-DEVICE PACKAGES [J].
OWENS, RP ;
CAWSEY, D .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :790-&
[4]  
Reich H.J., 1953, MICROWAVE THEORY TEC
[5]   PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].
RICCO, B ;
AZBEL, MY .
PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981
[6]   RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].
SHEWCHUK, TJ ;
CHAPIN, PC ;
COLEMAN, PD ;
KOPP, W ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510
[7]   RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].
SOLLNER, TCLG ;
GOODHUE, WD ;
TANNENWALD, PE ;
PARKER, CD ;
PECK, DD .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590
[8]   QUANTUM WELL OSCILLATORS [J].
SOLLNER, TCLG ;
TANNENWALD, PE ;
PECK, DD ;
GOODHUE, WD .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1319-1321