RUTHERFORD BACKSCATTERING AND SECONDARY ION MASS-SPECTROMETRY STUDIES OF ERBIUM IMPLANTED SILICON

被引：15
作者：
GILLIN, WP
ZHANG, JP
SEALY, BJ
机构：
[1] Department of Electronic and Electrical Engineering, University of Surrey Guildford
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 12期
关键词：
D O I：
10.1016/0038-1098(91)90344-U
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of implant temperature on the redistribution of ion implanted erbium in silicon has been studied. It has been found that by controlling the amorphous layer thickness by adjusting the implant temperature it is possible to stop the outdiffusion of erbium during annealing and to form instead thin layers of very high concentration at the centre of the implant damage profile.
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页码：907 / 910
页数：4
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