MONOLAYER HETEROINTERFACES AND THIN-LAYERS (APPROXIMATELY-10 A) IN ALXGA1-XAS-GAAS SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：16
作者：
BROWN, JM
HOLONYAK, N
LUDOWISE, MJ
DIETZE, WT
LEWIS, CR
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
来源：
ELECTRONICS LETTERS | 1984年 / 20卷 / 05期
关键词：
D O I：
10.1049/el:19840135
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：204 / 205
页数：2
相关论文
共 13 条
[1]   STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].
CAMRAS, MD ;
BROWN, JM ;
HOLONYAK, N ;
NIXON, MA ;
KALISKI, RW ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189
[2]  
DUPUIS PD, 1979, GALLIUM ARSENIDE REL, P1
[3]   STRUCTURE OF GAAS-GA1-XALXAS SUPER-LATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].
GRIFFITHS, RJM ;
CHEW, NG ;
CULLIS, AG ;
JOYCE, GC .
ELECTRONICS LETTERS, 1983, 19 (23) :988-990
[4]   LOW-THRESHOLD CONTINUOUS LASER OPERATION (300-337-DEGREES-K) OF MULTILAYER MO-CVD ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].
HOLONYAK, N ;
KOLBAS, RM ;
LAIDIG, WD ;
VOJAK, BA ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :737-739
[5]   ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :73-75
[6]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[7]  
HOLONYAK N, 1962, 1961 AIME C LOS ANG, V15, P49
[8]  
Kolbas R. M., 1978, Soviet Technical Physics Letters, V4, P28
[9]  
KOLBAS RM, 1978, PISMA ZH TEKH FIZ, V4, P69
[10]   THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].
LEWIS, CR ;
DIETZE, WT ;
LUDOWISE, MJ .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :507-524
12