ELECTRONIC TRANSPORT AT GRAIN-BOUNDARIES IN SILICON

被引：29
作者：
MCGONIGAL, GC
THOMSON, DJ
SHAW, JG
CARD, HC
机构：
来源：
PHYSICAL REVIEW B | 1983年 / 28卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.28.5908
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5908 / 5922
页数：15
相关论文
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