INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON

被引：3

作者：

CUSTER, JS ^{[1
]}

BATTAGLIA, A ^{[1
]}

SAGGIO, M ^{[1
]}

PRIOLO, F ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90702-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ion-beam-induced epitaxial crystallization rate of amorphous Si has been measured on crystal substrates with orientations every 5-degrees from (100) to (111) to (011). The data are explained using a growth-site-limited model wherein a beam-induced defect flux to the interface results in a growth rate dependent on the interfacial bonding configuration. This model helps clarify the relationship of ion-beam-induced epitaxy with thermal solid phase epitaxy.

引用

页码：881 / 885

页数：5

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