ELECTRICAL CHARACTERISTICS OF SILICON-TIN OXIDE HETEROJUNCTIONS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：34

作者：

VARMA, S ^{[1
]}

RAO, KV ^{[1
]}

KAR, S ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2812 / 2822

页数：11

共 12 条

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