FORMATION OF HIGH ASYMMETRIC OXIDE TUNNELLING BARRIERS ON NIOBIUM AND TANTALUM

被引:5
作者
HAHN, A
BRUNNER, M
EKRUT, H
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D O I
10.1016/0040-6090(83)90089-5
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T [工业技术];
学科分类号
08 ;
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页码:221 / 230
页数:10
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