LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP

被引:52
作者
HITCHENS, WR
HOLONYAK, N
LEE, MH
CAMPBELL, JC
机构
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1016/0022-0248(74)90429-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:154 / 165
页数:12
相关论文
共 29 条
[1]  
ALFEROV ZI, 1973, KRYST TECH, V8, P1029
[2]   INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].
ASTLES, MG ;
SMITH, FGH ;
WILLIAMS, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757
[3]   STIMULATED EMISSION IN IN1-XGAXP [J].
BURNHAM, RD ;
HOLONYAK, N ;
KEUNE, DL ;
SCIFRES, DR ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1970, 17 (10) :430-&
[4]   SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND CW LASER OPERATION (77 DEGREES K) OF IN1-XGAXP [J].
BURNHAM, RD ;
HOLONYAK, N ;
KEUNE, DL ;
SCIFRES, DR .
APPLIED PHYSICS LETTERS, 1971, 18 (04) :160-&
[5]  
CAMPBELL JC, UNPUBLISHED DATA
[6]   VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS [J].
CRAFORD, MG ;
GROVES, WO .
PROCEEDINGS OF THE IEEE, 1973, 61 (07) :862-880
[7]   NEAR-BANDGAP, NARROW-SPECTRUM, LOW-LOSS, VOLUME-EXCITED GAAS LASER (77 DEGREES K) WITH TIME-UNIFORM OUTPUT [J].
DAPKUS, PD ;
HOLONYAK, N ;
KEUNE, DL ;
BURNHAM, RD .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) :5215-&
[8]   SOLIDUS BOUNDARY IN GAP-INP PSEUDOBINARY SYSTEM [J].
FOSTER, LM ;
SCARDEFIELD, JE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :534-+
[9]   GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J].
HAKKI, BW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1469-&
[10]   WINDOW-HEAT SINK SANDWICH FOR OPTICAL EXPERIMENTS - DIAMOND (OR SAPPHIRE)-SEMICONDUCTOR-INDIUM SANDWICH [J].
HOLONYAK, N ;
SCIFRES, DR .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (12) :1885-&