SELF-COMPENSATION IN NITROGEN-DOPED ZNSE

被引：33
作者：
CHADI, DJ
TROULLIER, N
机构：
[1] NEC Research Institute, Princeton, NJ
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90226-V
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural and electronic properties of column V acceptor impurities in ZnSe are reviewed with special emphasis on N. The results of our calculations indicate that As and P acceptors possess two atomic configurations: a metastable effective-mass state with a small lattice relaxation and a stable deep state with a large lattice relaxation. Substitutional N gives rise to shallow acceptor states in either configuration. The low 20-30% doping efficiency is proposed to be caused by N bonding at interstitial sites. Various interstitial bonding configurations are found to give both shallow donor and shallow acceptor states leading to self-compensation. Post growth in diffusion of N is proposed to be useful in increasing the concentration of shallow acceptor states.
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收藏
页码：128 / 131
页数：4
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