INFLUENCE OF SEMICONDUCTOR BARRIER TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DIODES

被引：24
|
作者：
NIELSEN, OM
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期
关键词：
D O I：
10.1063/1.331761
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：5880 / 5886
页数：7
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