INFLUENCE OF SEMICONDUCTOR BARRIER TUNNELING ON THE CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DIODES

被引：24

|

作者：

NIELSEN, OM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.331761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5880 / 5886

页数：7

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