AN ANALYTIC STUDY OF (GAAL) AS GAIN GUIDED LASERS AT THRESHOLD

被引：38
作者：
STREIFER, W
BURNHAM, RD
SCIFRES, DR
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 05期
关键词：
D O I：
10.1109/JQE.1982.1071627
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：856 / 864
页数：9
相关论文
共 29 条
[1]   LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J].
ASBECK, PM ;
CAMMACK, DA ;
DANIELE, JJ ;
KLEBANOFF, V .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733
[2]   NON-GAUSSIAN FUNDAMENTAL MODE PATTERNS IN NARROW-STRIPE-GEOMETRY LASERS [J].
ASBECK, PM ;
CAMMACK, DA ;
DANIELE, JJ .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :504-506
[3]   ASYMMETRIC MODES IN OXIDE STRIPE HETEROJUNCTION LASERS [J].
BUTLER, JK ;
SOMMERS, HS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (06) :413-417
[4]   MULTIMODE FIELD-THEORY EXPLANATION OF KINKS IN CHARACTERISTICS OF DH LASERS [J].
BUUS, J .
ELECTRONICS LETTERS, 1978, 14 (05) :127-128
[5]   NONLINEARITY IN POWER-OUTPUT-CURRENT CHARACTERISTICS OF STRIPE-GEOMETRY INJECTION-LASERS [J].
CHINONE, N .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3237-3243
[6]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[7]   (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].
DIXON, RW ;
JOYCE, WB .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (06) :975-985
[8]   NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR-LASERS [J].
ETTENBERG, M .
APPLIED PHYSICS LETTERS, 1978, 32 (11) :724-725
[9]   MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3042-3050
[10]  
HOLONYAK N, 1979, I PHYS C SER, V45, P389
123