INTRABAND ABSORPTION IN SEMICONDUCTOR QUANTUM-WELLS IN THE PRESENCE OF A PERPENDICULAR MAGNETIC-FIELD

被引：34

作者：

ZIVANOVIC, S

MILANOVIC, V

IKONIC, Z

机构：

[1] Faculty of Electrical Engineering, University of Belgrade, Bulevar Revolucije 73

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.52.8305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intraband light absorption between conduction-band states in symmetric semiconductor quantum wells in the presence of a perpendicular magnetic field is discussed. By theoretical analysis three types of transitions are found: bound bound, bound free, and free free. Numerical calculations are given for a rectangular GaAs quantum well in bulk AlxGa1-xAs. The absorption in this structure strongly depends on structure parameters (well thickness, mole fraction, and effective masses), and also on temperature and external magnetic field. Analysis and numerical results such as those presented here may be important for the design of infrared detectors.

引用

页码：8305 / 8311

页数：7

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