INSE P-N HOMOJUNCTION DIODES

被引：3
作者：
KATERINCHUK, VN
KOVALYUK, MZ
机构：
[1] Institute of Materials Science, Academy of Sciences of Ukraine, Chernovtsy Branch
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 133卷 / 01期
关键词：
D O I：
10.1002/pssa.2211330128
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K45 / K48
页数：4
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