INSE P-N HOMOJUNCTION DIODES

被引：3

作者：

KATERINCHUK, VN

KOVALYUK, MZ

机构：

[1] Institute of Materials Science, Academy of Sciences of Ukraine, Chernovtsy Branch

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 133卷 / 01期

关键词：

D O I：

10.1002/pssa.2211330128

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K45 / K48

页数：4

共 11 条

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[3]

Bonch-Bruevich V. L., 1977, PHYSICS SEMICONDUCTO, P672

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CHEVY, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :876-888

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SEGURA A, 1987, APPL PHYS A, V44, P248

[9] DRIFT MOBILITY OF ELECTRONS PARALLEL TO THE C-AXIS IN INSE [J].

SHIGETOMI, S ;

IKARI, T ;

KOGA, Y ;

SHIGETOMI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 88 (01) :K71-K73

[10] CARRIER TRANSPORT MECHANISMS OF INSE P-N HOMOJUNCTION [J].

SHIGETOMI, S ;

IKARI, T ;

KOGA, Y ;

SHIGETOMI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1271-1274

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