THRESHOLD ANALYSIS OF CLEAVED-COUPLED-CAVITY LASERS

被引:6
作者
STREIFER, W
YEVICK, D
BURNHAM, RD
PAOLI, TL
机构
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D O I
10.1063/1.95263
中图分类号
O59 [应用物理学];
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页码:343 / 345
页数:3
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[1]   SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J].
EBELING, KJ ;
COLDREN, LA ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :6-8
[2]   THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].
MANNING, J ;
OLSHANSKY, R ;
SU, CB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530
[3]   DIODE-LASER THRESHOLD CURRENT-DENSITY AND LASING WAVELENGTH AS FUNCTIONS OF ACTIVE REGION THICKNESS [J].
STREIFER, W ;
SCIFRES, DR ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :401-403
[4]   1.5 MU-M WAVELENGTH GAINASP-C-3 LASERS - SINGLE-FREQUENCY OPERATION AND WIDEBAND FREQUENCY TUNING [J].
TSANG, WT ;
OLSSON, NA ;
LINKE, RA ;
LOGAN, RA .
ELECTRONICS LETTERS, 1983, 19 (11) :415-417
[5]   STABLE SINGLE-LONGITUDINAL-MODE OPERATION UNDER HIGH-SPEED DIRECT MODULATION IN CLEAVED-COUPLED-CAVITY GAINASP SEMICONDUCTOR-LASERS [J].
TSANG, WT ;
OLSSON, NA ;
LOGAN, RA .
ELECTRONICS LETTERS, 1983, 19 (13) :488-490
[6]   ENHANCED FREQUENCY-MODULATION IN CLEAVED-COUPLED-CAVITY SEMICONDUCTOR-LASERS WITH REDUCED SPURIOUS INTENSITY MODULATION [J].
TSANG, WT ;
OLSSON, NA .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :527-529