HIGH DOPING OF PHOSPHORUS IN SI USING GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：32

作者：

HIRAYAMA, H

TATSUMI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：131 / 133

页数：3

共 10 条

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[6]

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[7] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM [J].

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[8] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION [J].

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[10]

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