STRUCTURAL AND ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 EPITAXIAL-FILMS

被引：164

作者：

CHEUNG, JT

MORGAN, PED

LOWNDES, DH

ZHENG, XY

BREEN, J

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] INDIANA UNIV PURDUE UNIV,DEPT CHEM,INDIANAPOLIS,IN 46202

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial La0.5Sr0.5CoO3 films with very smooth surface morphology were grown on (100) SrTiO3 and (100) MgO substrates by pulsed laser deposition. Scanning tunneling microscopy reveals that the thin film is formed by the coalescence of many aligned square mesas. The growth proceeds from the edges of terraces which are stacked on the mesa. Spiral growth is never observed. Films display an crystallographically isotropic metallic-like electrical conductivity but become semiconductor-like after vacuum annealing. The energy for carrier activation is 0.3 eV. The change of the electrical resistivity of La0.5Sr0.5CoO3 with oxygen pressure at high temperature is much less sensitive than that of YBa2Cu3O7-x.

引用

页码：2045 / 2047

页数：3

共 13 条

[1]

Cheung J. T., 1992, Optics & Photonics News, V3, P24, DOI 10.1364/OPN.3.6.000024

[2]

CHEUNG JT, IN PRESS INTEGRATED

[3] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].