HIGH-POWER, BROAD-BAND INGAASP SUPERLUMINESCENT DIODE EMITTING AT 1.5-MU-M

被引：23
作者：
NOGUCHI, Y
YASAKA, H
MIKAMI, O
NAGAI, H
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期
关键词：
D O I：
10.1063/1.346093
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An InGaAsP superluminescent diode operating at 1.5 μm wavelength is successfully developed using a buried bent absorbing waveguide structure and antireflection coating to suppress lasing mode. Optical characteristics such as high output power (5 mW at 200 mA), broad-band spectral width (60-70 nm), short coherence length (about 30 μm), and low spectral modulation depth (less than 10%) are achieved. Injection current dependence of emitting wavelength and spectral width are also investigated.
引用
收藏
页码：2665 / 2667
页数：3
相关论文
共 11 条
[1]  
ALPHONSE GA, 1987, OPT FIBER C INTEG ME, V6, P21
[2]  
BURNS WK, 1983, J LIGHTWAVE TECHNOL, V1, P98
[3]   HIGH COUPLED POWER 1.3 MU-M EDGE-EMITTING LIGHT-EMITTING DIODE WITH A REAR WINDOW AND AN INTEGRATED ABSORBER [J].
GENEI, K ;
TANIOKA, A ;
SUHARA, H ;
CHINEN, K .
APPLIED PHYSICS LETTERS, 1988, 53 (13) :1138-1140
[4]   LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].
KAMINOW, IP ;
EISENSTEIN, G ;
STULZ, LW ;
DENTAI, AG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) :78-82
[5]   HIGH OUTPUT POWER GAINASP-INP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].
KASHIMA, Y ;
KOBAYASHI, M ;
TAKANO, H .
ELECTRONICS LETTERS, 1988, 24 (24) :1507-1508
[6]   HIGH-POWER, HIGH-EFFICIENCY WINDOW BURIED HETEROSTRUCTURE GAALAS SUPERLUMINESCENT DIODE WITH AN INTEGRATED ABSORBER [J].
KWONG, NSK ;
LAU, KY ;
BARCHAIM, N ;
URY, I ;
LEE, KJ .
APPLIED PHYSICS LETTERS, 1987, 51 (23) :1879-1881
[7]  
LEE TP, 1973, IEEE J QUANTUM ELECT, VQE 9, P820, DOI 10.1109/JQE.1973.1077738
[8]   DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH EFFECTIVE CURRENT CONFINEMENT [J].
MITO, I ;
KITAMURA, M ;
KOBAYASHI, K ;
KOBAYASHI, K .
ELECTRONICS LETTERS, 1982, 18 (22) :953-954
[9]   HIGH-POWER, HIGH-EFFICIENCY 1.3-MU-M SUPERLUMINESCENT DIODE WITH A BURIED BENT ABSORBING GUIDE STRUCTURE [J].
NAGAI, H ;
NOGUCHI, Y ;
SUDO, S .
APPLIED PHYSICS LETTERS, 1989, 54 (18) :1719-1721
[10]   NEW MEASUREMENT SYSTEM FOR FAULT LOCATION IN OPTICAL WAVE-GUIDE DEVICES BASED ON AN INTERFEROMETRIC-TECHNIQUE [J].
TAKADA, K ;
YOKOHAMA, I ;
CHIDA, K ;
NODA, J .
APPLIED OPTICS, 1987, 26 (09) :1603-1606
12