ETCHING PROCESSES FOR OPTOELECTRONIC DEVICES EMPLOYING PERIODIC MULTILAYERS OF INGAAS/INALAS

被引：6

作者：

ASHBY, CIH

HOWARD, AJ

VAWTER, GA

BRIGGS, RD

HAFICH, MJ

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185-0603, PO Box 5800

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 22期

关键词：

GALLIUM INDIUM ARSENIDE; ETCHING; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING;

D O I：

10.1049/el:19951292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonselective reactive ion beam etching (RIBE) using Cl-2/Ar mixtures at elevated temperatures and two isotropic wet chemistries (HCl/HNO3/H2O2 and HCl/H2O2/H2O) have been developed for fabricating 1.3 mu m optical transmission modulators employing periodic multilayers of InGaAs/InAlAs.

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收藏

页码：1948 / 1950

页数：3

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