ELECTRICALLY ACTIVE SUBTHRESHOLD DAMAGE IN SI ION-IMPLANTED WITH SI, GE, AND SN

The residual damage in Si after Si, Ge, and Sn implantation and annealing at elevated temperatures has been studied with capacitance-voltage measurements and deep level transient spectroscopy. We present a critical dose, specific to the implanted species and energy, below which no electrically active defects are found within our detection limit (2x10(-5) of the background doping). This critical dose is found to scale with the number of beam-induced vacancies and is in remarkable agreement with the critical dose established previously for observation of structural defects (dislocation loops) with transmission electron microscopy. (C) 1994 American Institute of Physics.