YELLOW-EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:26
作者
IKEDA, M
HONDA, M
MORI, Y
KANEKO, K
WATANABE, N
机构
关键词
D O I
10.1063/1.95459
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:964 / 966
页数:3
相关论文
共 9 条
[1]  
ALFEROV ZI, 1976, SOV TECH PHYS LETT, V2, P189
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6958-6964
[3]   YELLOW IN-1-XGA-XP-1-ZAS-Z DOUBLE-HETEROJUNCTION LASERS [J].
COLEMAN, JJ ;
HOLONYAK, N ;
LUDOWISE, MJ ;
WRIGHT, PD .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2015-2019
[4]   VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS [J].
FUJIMOTO, A ;
YASUDA, H ;
SHIMURA, M ;
YAMASHITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L488-L490
[5]   ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
HINO, I ;
GOMYO, A ;
KOBAYASHI, K ;
SUZUKI, T ;
NISHIDA, K .
APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989
[6]   LIQUID-PHASE EPITAXIAL (LPE) GROWN JUNCTION IN1-XGAXP (X - 0.63) LASER OF WAVELENGTH LAMBDAL - 5900 A (2.10 EV, 77 DEGREES K) [J].
HITCHENS, WR ;
HOLONYAK, N ;
LEE, MH ;
CAMPBELL, JC ;
COLEMAN, JJ ;
GROVES, WO ;
KEUNE, DL .
APPLIED PHYSICS LETTERS, 1974, 25 (06) :352-354
[7]   CW OPERATION OF AN ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
IKEDA, M ;
MORI, Y ;
TAKIGUCHI, M ;
KANEKO, K ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :661-663
[8]  
KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307
[9]   ROOM-TEMPERATURE CW OPERATION IN THE VISIBLE SPECTRAL RANGE OF 680-700 NM BY ALGAAS DOUBLE HETEROJUNCTION LASERS [J].
YAMAMOTO, S ;
HAYASHI, H ;
HAYAKAWA, T ;
MIYAUCHI, N ;
YANO, S ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1982, 41 (09) :796-798