THE CHARACTERIZATION OF INDIUM DESORBED SI SURFACES FOR LOW-TEMPERATURE SURFACE CLEANING IN SI MOLECULAR-BEAM EPITAXY

被引：17
作者：
YANG, HT
MOONEY, PM
机构：
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期
关键词：
D O I：
10.1063/1.336014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1854 / 1859
页数：6
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