THE NATURE OF THE TRAPPED HOLE ANNEALING PROCESS

被引：242

作者：

LELIS, AJ

OLDHAM, TR

BOESCH, HE

MCLEAN, FB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1808 / 1815

页数：8

共 29 条

[1]

BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J].

BREED, DJ .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :116-118

[3] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].

DOZIER, CM ;

BROWN, DB ;

THROCKMORTON, JL ;

MA, DI .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368

[4]

Dressendorfer P. V., 1989, IONIZING RAD EFFECTS, P87

[5] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].

FEIGL, FJ ;

FOWLER, WB ;

YIP, KL .

SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229

[6] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J].

FISCHETTI, MV ;

GASTALDI, R ;

MAGGIONI, F ;

MODELLI, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3129-3135

[7] CHARACTERIZATION OF 3 E'-CENTER VARIANTS IN X-IRRADIATED AND GAMMA-IRRADIATED HIGH-PURITY A-SIO2 [J].

GRISCOM, DL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) :481-488

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[9] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J].

HARARI, E ;

WANG, S ;

ROYCE, BSH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1310-1317

[10] ODMR OF RECOMBINATION CENTERS IN CRYSTALLINE QUARTZ [J].

HAYES, W ;

KANE, MJ ;

SALMINEN, O ;

WOOD, RL ;

DOHERTY, SP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (16) :2943-2951

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