ENFEEBLED OXYGEN BONDING AND METASTABILITY IN GAP-O

被引：45

作者：

BARAFF, GA

KANE, EO

SCHLUTER, M

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：548 / 560

页数：13

共 40 条

[1] ELECTRONIC-STRUCTURE OF SOLID-SURFACES [J].

APPELBAUM, JA ;

HAMANN, DR .

REVIEWS OF MODERN PHYSICS, 1976, 48 (03) :479-496

[2] STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J].

BACHELET, GB ;

GREENSIDE, HS ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (08) :4745-4752

[3]

BACHRACH RZ, COMMUNICATION

[4] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (08) :3563-3570

[5] NEED FOR A NEW METASTABLE STATE OF GAP-O- IN THE DEAN-HENRY-KUKIMOTO MODEL OF GAP-O [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1981, 47 (08) :601-604

[6]

BARAFF GA, 1981, 11TH P INT C DEF RAD, P287

[7]

BARAFF GA, 1979, PHYS REV B, V19, P4656

[8]

BECHMANN R, 1969, ELASTIC PIEZOELECTRI, V2, P8

[9] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

[10] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

← 1 2 3 4 →