REVERSIBILITY OF RECOMBINATION-INDUCED DEFECT REACTIONS IN AMORPHOUS SI-H

被引：15

|

作者：

REDFIELD, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 22期

关键词：

D O I：

10.1063/1.97319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1517 / 1518

页数：2

相关论文

共 50 条

[1] RECOMBINATION-INDUCED MIGRATION AND DEFECT FORMATION
PAVLOVICH, VN
FIZIKA TVERDOGO TELA, 1988, 30 (10): : 2974 - 2980
[2] DEFECT CREATION AND HYDROGEN EVOLUTION IN AMORPHOUS SI-H
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 285 - 290
[3] THEORY OF RADIATIVE RECOMBINATION BY DIFFUSION AND TUNNELLING IN AMORPHOUS SI-H
NOOLANDI, J
HONG, KM
STREET, RA
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 669 - 674
[4] THEORY OF RADIATIVE RECOMBINATION BY DIFFUSION AND TUNNELING IN AMORPHOUS SI-H
HONG, KM
NOOLANDI, J
STREET, RA
PHYSICAL REVIEW B, 1981, 23 (06): : 2967 - 2976
[5] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
[6] HALL-EFFECT IN AMORPHOUS SI-H AND AMORPHOUS SI-H AMORPHOUS GE-H SUPERLATTICES
SICHEL, EK
GREBER, L
WANG, K
APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1074 - 1076
[7] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY
TSANG, C
STREET, RA
PHYSICAL REVIEW B, 1979, 19 (06): : 3027 - 3040
[8] RECOMBINATION-INDUCED DEFECT HEATING AND RELATED PHENOMENA
YASSIEVICH, IN
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1433 - 1453
[9] OPTICALLY INDUCED CHANGES IN PHOTOLUMINESCENCE IN AMORPHOUS SI-H
BHAT, PK
SEARLE, TM
AUSTIN, IG
AIP CONFERENCE PROCEEDINGS, 1984, (120) : 288 - 295
[10] PHOTOINDUCED ABSORPTION STUDY OF RECOMBINATION IN AMORPHOUS SI-H DOPED WITH P OR B
PFOST, D
TAUC, J
SOLID STATE COMMUNICATIONS, 1983, 48 (02) : 195 - 198

← 1 2 3 4 5 →