DESIGN CALCULATIONS FOR SUB-MICRON GATE-LENGTH ALGAAS/GAAS MODULATION-DOPED FET STRUCTURES USING CARRIER SATURATION VELOCITY CHARGE-CONTROL MODEL

被引：26
作者：
DAS, MB
ROSZAK, ML
机构：
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 10期
关键词：
D O I：
10.1016/0038-1101(85)90030-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：997 / 1005
页数：9
相关论文
共 21 条
[1]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[2]   CHANNEL-LENGTH EFFECTS IN QUARTER-MICROMETER GATE-LENGTH GAAS-MESFETS [J].
CHAO, PC ;
SMITH, PM ;
WANUGA, S ;
PERKINS, WH ;
WOLF, ED .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :326-328
[3]   DETERMINATION OF CARRIER SATURATION VELOCITY IN SHORT-GATE-LENGTH MODULATION-DOPED FETS [J].
DAS, MB ;
KOPP, W ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :446-449
[4]   A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J].
DAS, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) :11-17
[5]   TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
LAVIRON, M ;
CHAPLART, J ;
LINH, NT .
ELECTRONICS LETTERS, 1980, 16 (17) :667-668
[6]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[7]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[8]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[9]   INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].
DRUMMOND, TJ ;
KOPP, W ;
THORNE, RE ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :879-881
[10]   USE OF MOLECULAR-BEAM EPITAXY IN RESEARCH AND DEVELOPMENT OF SELECTED HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES [J].
EASTMAN, LF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :131-134
123