SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS

被引：22

作者：

BANWELL, TC ^{[1
]}

MAENPAA, M ^{[1
]}

NICOLET, MA ^{[1
]}

TANDON, JL ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1983年 / 44卷 / 06期

关键词：

D O I：

10.1016/0022-3697(83)90038-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：507 / 514

页数：8

共 24 条

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[9] SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - CHANGES INDUCED BY ANNEALING [J].

KUNG, JK ;

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[10] EFFECTS OF ANNEALING ON CARRIER CONCENTRATION OF HEAVILY SI-DOPED GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :912-914

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