ACCURATE MEASUREMENT OF REFLECTIVITY OVER WAVELENGTH OF A LASER-DIODE ANTIREFLECTION COATING USING AN EXTERNAL-CAVITY LASER

被引：6
作者：
STOKES, LF
机构：
[1] Hewlett-Packard Lightwave Operation., Santa Rosa
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1993年 / 11卷 / 07期
关键词：
D O I：
10.1109/50.238077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method to measure laser diode facet antireflection coating over wavelength is presented. The laser diode is coupled to a wavelength-selective external cavity, and laser threshold current over the wavelength region of interest is measured. The coating reflectivity over wavelength is derived from the threshold current data. Reflectivities as low as 1 x 10(-5) have been measured with good fit over wavelength to an ideal single layer coating. In addition, the net external cavity feedback is also determined. An estimate of the accuracy of the reflectivity measurement is made.
引用
收藏
页码：1162 / 1167
页数：6
相关论文
共 9 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P172
[2]   EXTERNAL-CAVITY SEMICONDUCTOR-LASER WITH 15-NM CONTINUOUS TUNING RANGE [J].
FAVRE, F ;
LEGUEN, D ;
SIMON, JC ;
LANDOUSIES, B .
ELECTRONICS LETTERS, 1986, 22 (15) :795-796
[3]   MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE [J].
KAMINOW, IP ;
EISENSTEIN, G ;
STULZ, LW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :493-495
[4]   COHERENT OPTICAL INTERFERENCE EFFECTS IN EXTERNAL-CAVITY SEMICONDUCTOR-LASERS [J].
OLSSON, A ;
TANG, CL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (08) :1320-1323
[5]  
RAMO S, 1965, FIELDS WAVES COMMUNI, P349
[6]   GAINASP SEMICONDUCTOR-LASER AMPLIFIERS FOR SINGLE-MODE FIBER COMMUNICATIONS [J].
SIMON, JC .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) :1286-1295
[7]   10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J].
WYATT, R ;
DEVLIN, WJ .
ELECTRONICS LETTERS, 1983, 19 (03) :110-112
[8]   CHARACTERISTICS OF A GRATING-EXTERNAL-CAVITY SEMICONDUCTOR-LASER CONTAINING INTRACAVITY PRISM BEAM EXPANDERS [J].
ZORABEDIAN, P .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (03) :330-335
[9]   BISTABILITY IN GRATING TUNED EXTERNAL CAVITY SEMICONDUCTOR-LASERS [J].
ZORABEDIAN, P ;
TRUTNA, WR ;
CUTLER, LS .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (11) :1855-1860
1