GROWTH OF LOW-RESISTIVITY HIGH-QUALITY ZNSE, ZNS FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：64

作者：

YOSHIKAWA, A

YAMAGA, S

TANAKA, K

KASAI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90110-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：13 / 16

页数：4

共 12 条

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[9] NEW AND SIMPLE MOCVD TECHNIQUE USING COMPLETELY GASEOUS MO-SOURCES ESPECIALLY USEFUL FOR GROWING ZN-CHALCOGENIDE FILMS [J].

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[10] EFFECTS OF [H2SE] [DMZN] MOLAR RATIO ON EPITAXIAL ZNSE FILMS GROWN BY LOW-PRESSURE MOCVD [J].

YOSHIKAWA, A ;

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KASAI, H .

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