FIELD DEPENDENCE OF SURFACE MOBILITY AT N-N HETEROJUNCTION INTERFACE

被引：7
作者：
CHANG, LL
机构：
来源：
SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 01期
关键词：
D O I：
10.1016/0038-1101(65)90013-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：86 / &
相关论文
共 6 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]  
CHANG LL, TO BE PUBLISHED
[3]   FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J].
ESAKI, L ;
HOWARD, WE ;
HEER, J .
APPLIED PHYSICS LETTERS, 1964, 4 (01) :3-&
[4]  
ESAKI L, 1964, JUN INT C SOL SURF P
[5]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
SCHRIEFFER, JR .
PHYSICAL REVIEW, 1955, 97 (03) :641-646
[6]  
Shockley W., 1951, US Patent, Patent No. 2569347
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