KINETICS AND MECHANISMS OF HIGH-TEMPERATURE CREEP IN SILICON-CARBIDE .2. CHEMICALLY VAPOR-DEPOSITED

被引:120
作者
CARTER, CH [1 ]
DAVIS, RF [1 ]
BENTLEY, J [1 ]
机构
[1] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37830
关键词
D O I
10.1111/j.1151-2916.1984.tb19510.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:732 / 740
页数:9
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